DocumentCode
689344
Title
32 μW pulsed terahertz emission from high mobility InAlAs/InGaAs multi-nanolayer structures
Author
Dietz, R.J.B. ; Globisch, B. ; Gerhard, M. ; Stanze, D. ; Koch, Martin ; Sartorius, B. ; Gobel, T. ; Schell, M.
Author_Institution
Fraunhofer Inst. for Telecommun., Heinrich-Hertz-Inst., Berlin, Germany
fYear
2013
fDate
9-14 June 2013
Firstpage
1
Lastpage
2
Abstract
We measured pulsed THz emission from high-mobility MBE grown InGaAs/InAlAs multi-nanolayer structures. The detected average THz power was 32 μW at 32 mW optical excitation power. The bandwidth of the THz pulses exceeds 4 THz.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; nanophotonics; optical multilayers; optical variables measurement; photodetectors; photoexcitation; semiconductor growth; terahertz wave spectra; average terahertz power detection; bandwidth; high-mobility MBE grown InGaAs-InAlAs multinanolayer structures; optical excitation power; power 32 mW; power 32 muW; pulsed terahertz emission measurement; Indium gallium arsenide; Optical pulses; Optical variables measurement; Probes; Stimulated emission; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6833727
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