Title :
32 μW pulsed terahertz emission from high mobility InAlAs/InGaAs multi-nanolayer structures
Author :
Dietz, R.J.B. ; Globisch, B. ; Gerhard, M. ; Stanze, D. ; Koch, Martin ; Sartorius, B. ; Gobel, T. ; Schell, M.
Author_Institution :
Fraunhofer Inst. for Telecommun., Heinrich-Hertz-Inst., Berlin, Germany
Abstract :
We measured pulsed THz emission from high-mobility MBE grown InGaAs/InAlAs multi-nanolayer structures. The detected average THz power was 32 μW at 32 mW optical excitation power. The bandwidth of the THz pulses exceeds 4 THz.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; nanophotonics; optical multilayers; optical variables measurement; photodetectors; photoexcitation; semiconductor growth; terahertz wave spectra; average terahertz power detection; bandwidth; high-mobility MBE grown InGaAs-InAlAs multinanolayer structures; optical excitation power; power 32 mW; power 32 muW; pulsed terahertz emission measurement; Indium gallium arsenide; Optical pulses; Optical variables measurement; Probes; Stimulated emission; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
