Plasmonic terahertz monochromatic coherent emission from an asymmetric chirped dual-grating-gate InP-HEMT with a photonic vertical cavity

Author

Watanabe, Toshio ; Satou, Akira ; Suemitsu, Tetsuya ; Knap, Wojciech ; Popov, V.V. ; Otsuji, Taiichi

Author_Institution

Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan

fYear

2013

fDate

9-14 June 2013

Firstpage

1

Lastpage

2

Abstract

We designed and fabricated InP-based high electron mobility transistors featuring an asymmetric chirped dual-grating-gate structure with a resonant-enhanced photonic vertical cavity. The device structure greatly enhances the Doppler-effect-driven plasma instability, resulting in intense monochromatic superradiant terahertz emission at 3.55 THz at 140K for the first time.

Keywords

III-V semiconductors; high electron mobility transistors; indium compounds; plasma instability; plasmonics; terahertz wave spectra; Doppler-effect-driven plasma instability; InP; InP-based high electron mobility transistors; asymmetric chirped dual-grating-gate InP-HEMT; asymmetric chirped dual-grating-gate structure; device structure; frequency 3.55 THz; monochromatic superradiant terahertz emission; plasmonic terahertz monochromatic coherent emission; resonant-enhanced photonic vertical cavity; temperature 140 K; Cavity resonators; Chirp; HEMTs; MODFETs; Photonics; Plasmons; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics (CLEO), 2013 Conference on

Conference_Location

San Jose, CA

Type

conf

Filename

6833732