Doping position control of nitrogen-vacancy centers in diamond using nitrogen-doped chemical vapor deposition on micropatterned substrate

Author

Gomi, Tomohiro ; Tomizawa, Syuhei ; Ohashi, Kazumi ; Itoh, Kohei M. ; Ishi-Hayase, Junko ; Watanabe, Hiromi ; Umezawa, Hitoshi ; Shikata, Shin-Ichi

Author_Institution

Dept. of Appl. Physic, Keio Univ., Yokohama, Japan

fYear

2013

fDate

9-14 June 2013

Firstpage

1

Lastpage

2

Abstract

We demonstrate lateral position control of nitrogen-vacancy centers doped near the surface of diamond substrate using micropatterned substrate for nitrogen-doped isotopically-enriched chemical vapor deposition. We confirm the spatially-selective doping of NV centers on etched area. We also found the nitrogen-vacancy creation efficiency at the etched area is much higher than that at the non-etched area of diamond substrate.

Keywords

chemical vapour deposition; diamond; doping; etching; nitrogen; vacancies (crystal); C:N; NV centers; diamond substrate surface; doping position control; etched area; lateral position control; micropatterned substrate; nitrogen-doped isotopically-enriched chemical vapor deposition; nitrogen-vacancy centers; nitrogen-vacancy creation efficiency; spatially-selective doping; Chemical vapor deposition; Diamonds; Doping; Nitrogen; Position control; Substrates; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics (CLEO), 2013 Conference on

Conference_Location

San Jose, CA

Type

conf

Filename

6833840