Dual THz emissions of GaAsBi for THz photoconductive switching

Author

Heshmat, Barmak ; Masnadi-Shirazi, M. ; Lewis, R.B. ; Tiedje, T. ; Darcie, Thomas

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Victoria, Victoria, BC, Canada

fYear

2013

fDate

9-14 June 2013

Firstpage

1

Lastpage

2

Abstract

We have measured dual THz emissions from GaAsBi-based photoconductive (PC) switches. Such consecutive emissions triggered by a single excitation pulse are caused by dual carrier lifetime previously reported for this material. The study investigates the variation of such emissions with different material growth conditions such as Bi percentage and annealing temperature. Measured results reveal a notable contrast of the effect of such property in THz emitting and THz receiving applications of PC switches.

Keywords

III-V semiconductors; annealing; electro-optical switches; gallium compounds; optical fabrication; optical materials; photoconducting materials; photoconducting switches; terahertz wave spectra; Bi percentage; GaAsBi; GaAsBi-based photoconductive switches; THz emitting application; THz receiving application; annealing temperature; dual THz emission; dual carrier lifetime; material growth conditions; photoconductive switching; single excitation pulse; Annealing; Bismuth; Materials; Optical switches; Optical transmitters; Spectroscopy; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics (CLEO), 2013 Conference on

Conference_Location

San Jose, CA

Type

conf

Filename

6833853