DocumentCode
689516
Title
Near infrared light emitting from InN/InGaN/GaN dot-in-a-nanorod heterostructure
Author
Sang-Tae Lee ; Hyo-Seok Choi ; Byung-Guon Park ; Kyung-Jin Kim ; Moon-Deock Kim ; Song-Gang Kim ; Woo-chul Yang
Author_Institution
Dept. of Phys., Chungnam Nat. Univ., Dae-jeon, South Korea
fYear
2013
fDate
9-14 June 2013
Firstpage
1
Lastpage
2
Abstract
We report on the light emitting of InN/InGaN/GaN dot-in-a-nanorods heterostructure grown on Si(111) substrates using plasma-assisted molecular beam epitaxy. Sharp and isolated single exciton emission line in the near infrared spectral range was observed.
Keywords
III-V semiconductors; excitons; gallium compounds; indium compounds; infrared spectra; molecular beam epitaxial growth; nanophotonics; nanorods; photoluminescence; semiconductor growth; semiconductor quantum dots; semiconductor quantum wells; silicon; InN-InGaN-GaN; InN-InGaN-GaN dot-in-a-nanorod heterostructure growth; Si; near infrared light emission; plasma-assisted molecular beam epitaxy; silicon substrates; single-exciton emission line; Educational institutions; Gallium nitride; Light sources; Photonics; Physics; Quantum dot lasers; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6833902
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