Title :
Toward an efficient germanium-on-silicon laser: Ultimate limits of tensile strain and n-type doping
Author :
Sukhdeo, David S. ; Donguk Nam ; Ze Yuan ; Dutt, Birendra Raj ; Saraswat, Krishna C.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
We investigate the ultimate limits of tensile strain and n-type doping for improving germanium lasers. These ultimate limits occur around 2.3-3.7% biaxial strain and 1018-1019 cm-3 electrically-active doping. >1000x threshold reductions are possible.
Keywords :
elemental semiconductors; germanium; semiconductor doping; semiconductor lasers; biaxial strain; electrically-active doping; germanium-on-silicon laser; n-type doping; tensile strain; Doping; Laser theory; Mirrors; Silicon; Tensile strain;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
