DocumentCode :
689527
Title :
Long photon lifetime from microdisk cavity laser with type II GaSb/GaAs quantum dots
Author :
Hsu, K.S. ; Chang, C.C. ; Lin, W.H. ; Shih, M.H. ; Lin, S.Y. ; Chang, Y.C.
Author_Institution :
Res. Center for Appl. Sci. (RCAS), Taipei, Taiwan
fYear :
2013
fDate :
9-14 June 2013
Firstpage :
1
Lastpage :
2
Abstract :
Microdisk lasers with active region made of type II GaSb/GaAs quantum dots on the GaAs substrate have been demonstrated. Lasing wavelengths near 1μm was achieved and longer photon lifetime from type II structure also observed.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; microcavity lasers; microdisc lasers; quantum dot lasers; GaAs; GaAs substrate; GaSb-GaAs; active region; lasing wavelength; microdisk cavity laser; photon lifetime; type II quantum dots; type II structure; Cavity resonators; Gallium arsenide; Gas lasers; Optical device fabrication; Photonics; Quantum dot lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
6833913
Link To Document :
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