• DocumentCode
    689601
  • Title

    Properties of InAs quantum dots in nanoimprint lithography patterned GaAs pits

  • Author

    Tommila, J. ; Schramm, Alexander ; Hakkarainen, T.V. ; Dumitrescu, M. ; Guina, M. ; Heinonen, E.

  • Author_Institution
    Optoelectron. Res. Centre, Tampere Univ. of Technol., Tampere, Finland
  • fYear
    2013
  • fDate
    9-14 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report on the structural and optical properties of InAs quantum dots fabricated into nanoimprint lithography patterned GaAs pits. The size-dependent properties of single site-controlled quantum dots and their integration into optical microcavities are presented.
  • Keywords
    III-V semiconductors; indium compounds; microcavities; nanofabrication; nanolithography; nanophotonics; semiconductor quantum dots; soft lithography; GaAs; InAs; nanoimprint lithography; optical microcavities; optical properties; single site-controlled quantum dots; size-dependent properties; structural properties; Excitons; Gallium arsenide; Optical device fabrication; Optical imaging; Optical reflection; Quantum dots; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2013 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6833988
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=689601