Title :
Complementing trends of photoluminescence and terahertz intensities in staggered InGaN quantum wells
Author :
Guan Sun ; Ruolin Chen ; Ding, Yujie J. ; Hongping Zhao ; Guangyu Liu ; Jing Zhang ; Tansu, N.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
We demonstrate that photoluminescence and terahertz intensities show complementing trends for staggered InGaN quantum wells (QWs), dictated by separation of electrons and holes.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; terahertz wave spectra; wide band gap semiconductors; InGaN; electron-hole separation; photoluminescence; staggered quantum wells; terahertz intensity; Charge carrier processes; Electric fields; Gallium nitride; Laser beams; Laser excitation; Photoluminescence; Wave functions;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
