DocumentCode :
689708
Title :
Emission from a dipole-forbidden energy state in a GaAs quantum-ring induced by dressed photon
Author :
Yatsui, T. ; Nomura, W. ; Mano, Toru ; Miyazaki, H. ; Sakoda, K. ; Kawazoe, T. ; Ohtsu, M.
Author_Institution :
Univ. of Tokyo, Tokyo, Japan
fYear :
2013
fDate :
9-14 June 2013
Firstpage :
1
Lastpage :
2
Abstract :
A significant decrease in the decay time of the emission from a dipole-forbidden state in a GaAs quantum-ring was observed, using the near-field interaction induced by the close proximity of an apertured fiber probe tip.
Keywords :
III-V semiconductors; dressed states; fibre optic sensors; gallium arsenide; nanophotonics; photoluminescence; quantum optics; GaAs; GaAs quantum ring; apertured fiber probe tip; dipole-forbidden energy state; dressed photon; emission decay time; near-field interaction; Energy states; Gallium arsenide; Noise measurement; Optical buffering; Optical fiber devices; Photonics; Probes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
6834095
Link To Document :
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