Silicon-on-insulator spectrometers with integrated GaInAsSb photodiode array for wideband operation from 1500 to 2300 nm

Author

Ryckeboer, E. ; Gassenq, A. ; Hattasan, N. ; Cerutti, L. ; Rodriguez, J.B. ; Tournie, E. ; Baets, Roel ; Roelkens, Gunther

Author_Institution

Dept. of Inf. Technol., Ghent Univ., Ghent, Belgium

fYear

2013

fDate

9-14 June 2013

Firstpage

1

Lastpage

2

Abstract

Four echelle-type spectrometers with heterogeneously integrated GaInAsSb photodetectors on a silicon-on-insulator chip is realized. The operating wavelengths stretch from 1500 to 2300 nm. A maximum channel crosstalk of -10 dB, dark current of -2.5 μA and responsivity of 0.61 A/W at 1530 nm and 0.7 A/W at 2200 nm were obtained.

Keywords

III-V semiconductors; arsenic compounds; diffraction gratings; gallium compounds; indium compounds; infrared spectra; infrared spectrometers; integrated optics; optical arrays; optical crosstalk; photodetectors; photodiodes; silicon-on-insulator; GaInAsSb; current -2.5 muA; dark current; echelle-type spectrometers; integrated GaInAsSb photodetectors; integrated GaInAsSb photodiode array; loss -10 dB; maximum channel crosstalk; silicon-on-insulator spectrometers; wavelength 1500 nm to 2300 nm; Absorption; Arrays; Current measurement; Gratings; Optical waveguides; Photodiodes; Silicon-on-insulator;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics (CLEO), 2013 Conference on

Conference_Location

San Jose, CA

Type

conf

Filename

6834109