• DocumentCode
    690076
  • Title

    Phonon-assisted bandtail anti-stokes photoluminescence of GaN: Novel mechanism for laser cooling

  • Author

    Guan Sun ; Ruolin Chen ; Ding, Yujie J.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
  • fYear
    2013
  • fDate
    9-14 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Anti-Stokes photoluminescence (ASPL) of n-type GaN is observed at room temperature. By studying behaviors of ASPL, the mechanism is identified as phonon-assisted bandtail photoluminescence. Such a process results in laser cooling.
  • Keywords
    III-V semiconductors; gallium compounds; laser cooling; optical materials; photoluminescence; ASPL; GaN; laser cooling; n-type GaN; phonon-assisted bandtail anti-Stokes photoluminescence; room temperature; temperature 293 K to 298 K; Cooling; Gallium nitride; Laser excitation; Photonics; Pump lasers; Semiconductor lasers; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2013 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6834468
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=690076