• DocumentCode
    690173
  • Title

    Raman enhanced supercontinuum generation from 2–20 μm in GaAs using 3 ps CO2 laser pulses

  • Author

    Pigeon, J.J. ; Tochitsky, S.Ya. ; Joshi, C.

  • Author_Institution
    Dept. of Electr. Eng., UCLA, Los Angeles, CA, USA
  • fYear
    2013
  • fDate
    9-14 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Supercontinua covering the entire mid-IR region were obtained by sending a train of 3 ps CO2 laser pulses through a 67mm GaAs crystal. The spectral width is attributed to stimulated Raman scattering and self-phase modulation.
  • Keywords
    III-V semiconductors; gallium arsenide; high-speed optical techniques; self-phase modulation; spectral line breadth; stimulated Raman scattering; supercontinuum generation; CO2; CO2 laser pulses; GaAs; Raman enhanced supercontinuum generation; mid-IR region; self-phase modulation; size 67 mm; spectral width; stimulated Raman scattering; time 3 ps; Crystals; Gallium arsenide; Measurement by laser beam; Modulation; Nonlinear optics; Optical pumping; Pump lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2013 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6834566
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=690173