A Low Power 3.1-10.6 GHz Ultra-wideband CMOS Power Amplifier with Resistive Shunt Feedback Technique

Author

Sapawi, R. ; Sahari, S.K. ; Kipli, K.

Author_Institution

Dept. of Electron., Univ. Malaysia Sarawak (UNIMAS), Kota Samarahan, Malaysia

fYear

2013

fDate

23-24 Dec. 2013

Firstpage

172

Lastpage

175

Abstract

This paper presents the design of power amplifier (PA) 0.18 um CMOS technology for ultra wide band (UWB) application at 3.1-10.6 GHz. This PA design is based on two-stage common source topology with resistive shunt feedback technique and output buffer to achieve flat and higher gain, wider bandwidth and better stability. The simulation results show that the average power gain of 12.4 ± 1.1 dB, input return loss (S11) and output return loss (S22) less than -8.6 dB is achieved. Furthermore, low power consumption is 19 mW from 1.0 V supply voltage.

Keywords

CMOS analogue integrated circuits; MMIC power amplifiers; buffer circuits; circuit feedback; field effect MMIC; integrated circuit design; low-power electronics; ultra wideband technology; CMOS technology; PA design; frequency 3.1 GHz to 10.6 GHz; low power ultra-wideband CMOS power amplifier; output buffer; power 19 mW; resistive shunt feedback technique; size 0.18 mum; two-stage common source topology; voltage 1.0 V; CMOS integrated circuits; CMOS technology; Gain; Power amplifiers; Topology; Wideband; (UWB); CMOS; Power amplifier; cascode; resisive shunt feedback; ultra-wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Computer Science Applications and Technologies (ACSAT), 2013 International Conference on

Conference_Location

Kuching

Type

conf

DOI

10.1109/ACSAT.2013.41

Filename

6836570