• DocumentCode
    691395
  • Title

    Exploring ultra low noise semiconductor devices

  • Author

    Leitch, James

  • Author_Institution
    Inst. of Phys., London, UK
  • fYear
    2013
  • fDate
    29-29 Oct. 2013
  • Firstpage
    29
  • Lastpage
    32
  • Abstract
    The simulation of a new proposed active device structure shows a significant reduction in the thermal and shot noise levels, when used as an amplifier, giving an uncooled Te of the order 1oK. A mono-isotype pp+junction (MIJ) is used to form an isotype region within an anisotype device structure.
  • Keywords
    semiconductor device noise; shot noise; thermal noise; active device structure; amplifiers; shot noise; thermal noise; ultra low noise semiconductor devices;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Active and Passive RF Devices Seminar, 1st Annual
  • Conference_Location
    Glasgow
  • Electronic_ISBN
    978-1-84919-793-9
  • Type

    conf

  • DOI
    10.1049/ic.2013.0243
  • Filename
    6842466
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=691395