DocumentCode :
691395
Title :
Exploring ultra low noise semiconductor devices
Author :
Leitch, James
Author_Institution :
Inst. of Phys., London, UK
fYear :
2013
fDate :
29-29 Oct. 2013
Firstpage :
29
Lastpage :
32
Abstract :
The simulation of a new proposed active device structure shows a significant reduction in the thermal and shot noise levels, when used as an amplifier, giving an uncooled Te of the order 1oK. A mono-isotype pp+junction (MIJ) is used to form an isotype region within an anisotype device structure.
Keywords :
semiconductor device noise; shot noise; thermal noise; active device structure; amplifiers; shot noise; thermal noise; ultra low noise semiconductor devices;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Active and Passive RF Devices Seminar, 1st Annual
Conference_Location :
Glasgow
Electronic_ISBN :
978-1-84919-793-9
Type :
conf
DOI :
10.1049/ic.2013.0243
Filename :
6842466
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=691395
بازگشت