DocumentCode
69140
Title
Fixed-Pattern-Noise Correction for an Integrating Wide-Dynamic-Range CMOS Image Sensor
Author
Das, Dipayan ; Collins, Steve
Author_Institution
Dept. of Eng. Sci., Univ. of Oxford, Oxford, UK
Volume
60
Issue
1
fYear
2013
fDate
Jan. 2013
Firstpage
314
Lastpage
319
Abstract
A 100 × 98 CMOS image sensor (CIS) fabricated in a standard 0.35-μm CMOS technology is described. The pixels in this CIS integrate the photocurrent in each pixel for a time that depends upon the photocurrent to map wide-dynamic-range (WDR) real-world scenes to a lower DR output. To improve their low-light sensitivity, these pixels include a MOSFET that restricts the voltage changes on the photodiode. In addition, the user-defined input voltage needed to generate a WDR response is one that preserves the low-light sensitivity of the pixels. This results in pixels with a linear response at low photocurrents and a logarithmic response at larger photocurrents. Results are presented, which show that a fixed-pattern-noise (FPN) correction procedure based upon assuming either a linear or a logarithmic response introduces artifacts into some images. An FPN correction procedure that both avoids these artifacts and accurately estimates the mean photocurrent in the array is then presented.
Keywords
CMOS image sensors; MOSFET; photoconductivity; photodiodes; photoemission; sensor arrays; CIS; FPN correction; MOSFET; WDR response; fixed-pattern-noise correction; integrating wide-dynamic-range CMOS image sensor; logarithmic response; mean photocurrent array; photodiode; size 0.35 mum; standard CMOS technology; user-defined input voltage; Arrays; Mathematical model; Noise; Photoconductivity; Photodiodes; Table lookup; Transistors; Active pixel sensor; CMOS image sensors (CISs); fixed pattern noise (FPN); wide dynamic range (WDR);
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2012.2226589
Filename
6353907
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