• DocumentCode
    691402
  • Title

    The development of planar Gunn diodes for the realisation of MMIC oscillators

  • Author

    Papageorgiou, V. ; Khalid, Amir ; Li, Cong ; Dunn, G.M. ; Cumming, David R. S.

  • Author_Institution
    Sch. of Eng., Univ. of Glasgow, Glasgow, UK
  • fYear
    2013
  • fDate
    29-29 Oct. 2013
  • Firstpage
    55
  • Lastpage
    58
  • Abstract
    This review presents the development of planar Gunn diodes over the last few years for the implementation of millimetre-wave sources. The fabrication procedure incorporates electron beam lithography and the oscillation frequency is determined by the anode-to-cathode distance. The evolution of the material design for the maximisation of the maximum frequency of oscillation and the enhancement of the generated power is presented in this paper. The recent implementation of a planar Gunn diode with a high-electron mobility transistor on the same substrate is also described in this work.
  • Keywords
    Gunn diodes; HEMT circuits; MMIC oscillators; electron beam lithography; MMIC oscillators; anode-to-cathode distance; electron beam lithography; high-electron mobility transistor; millimetre-wave sources; oscillation frequency; planar Gunn diodes;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Active and Passive RF Devices Seminar, 1st Annual
  • Conference_Location
    Glasgow
  • Electronic_ISBN
    978-1-84919-793-9
  • Type

    conf

  • DOI
    10.1049/ic.2013.0248
  • Filename
    6842473