DocumentCode :
691402
Title :
The development of planar Gunn diodes for the realisation of MMIC oscillators
Author :
Papageorgiou, V. ; Khalid, Amir ; Li, Cong ; Dunn, G.M. ; Cumming, David R. S.
Author_Institution :
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
fYear :
2013
fDate :
29-29 Oct. 2013
Firstpage :
55
Lastpage :
58
Abstract :
This review presents the development of planar Gunn diodes over the last few years for the implementation of millimetre-wave sources. The fabrication procedure incorporates electron beam lithography and the oscillation frequency is determined by the anode-to-cathode distance. The evolution of the material design for the maximisation of the maximum frequency of oscillation and the enhancement of the generated power is presented in this paper. The recent implementation of a planar Gunn diode with a high-electron mobility transistor on the same substrate is also described in this work.
Keywords :
Gunn diodes; HEMT circuits; MMIC oscillators; electron beam lithography; MMIC oscillators; anode-to-cathode distance; electron beam lithography; high-electron mobility transistor; millimetre-wave sources; oscillation frequency; planar Gunn diodes;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Active and Passive RF Devices Seminar, 1st Annual
Conference_Location :
Glasgow
Electronic_ISBN :
978-1-84919-793-9
Type :
conf
DOI :
10.1049/ic.2013.0248
Filename :
6842473
Link To Document :
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