DocumentCode
691402
Title
The development of planar Gunn diodes for the realisation of MMIC oscillators
Author
Papageorgiou, V. ; Khalid, Amir ; Li, Cong ; Dunn, G.M. ; Cumming, David R. S.
Author_Institution
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
fYear
2013
fDate
29-29 Oct. 2013
Firstpage
55
Lastpage
58
Abstract
This review presents the development of planar Gunn diodes over the last few years for the implementation of millimetre-wave sources. The fabrication procedure incorporates electron beam lithography and the oscillation frequency is determined by the anode-to-cathode distance. The evolution of the material design for the maximisation of the maximum frequency of oscillation and the enhancement of the generated power is presented in this paper. The recent implementation of a planar Gunn diode with a high-electron mobility transistor on the same substrate is also described in this work.
Keywords
Gunn diodes; HEMT circuits; MMIC oscillators; electron beam lithography; MMIC oscillators; anode-to-cathode distance; electron beam lithography; high-electron mobility transistor; millimetre-wave sources; oscillation frequency; planar Gunn diodes;
fLanguage
English
Publisher
iet
Conference_Titel
Active and Passive RF Devices Seminar, 1st Annual
Conference_Location
Glasgow
Electronic_ISBN
978-1-84919-793-9
Type
conf
DOI
10.1049/ic.2013.0248
Filename
6842473
Link To Document