DocumentCode :
692158
Title :
Emerging memories technology landscape
Author :
Sandhu, Gurtej S.
Author_Institution :
Micron Technol. Inc., Boise, ID, USA
fYear :
2013
fDate :
12-14 Aug. 2013
Firstpage :
1
Lastpage :
5
Abstract :
Several flavors of new memory technologies based on alternate state variables are under active research and exploration and this paper provides an overview of the major emerging memory technology developments. The basic mechanisms and concepts driving the most promising technologies, their current development status, and potential opportunities for providing differentiated product solutions are discussed. The review includes discussion of desirable target metrics for a memory chip and some fundamental limitations in performance arising from device physics constraints or materials complexity.
Keywords :
DRAM chips; SRAM chips; DRAM; RRAM; SRAM; STMRAM; material complexity; memory technology development; physics constraints; Junctions; Magnetic anisotropy; Magnetic tunneling; Materials; Programming; Random access memory; Switches; Memory Technology; PCM; RRAM; STMRAM;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2013 13th
Conference_Location :
Minneapolis, MN
Type :
conf
DOI :
10.1109/NVMTS.2013.6851050
Filename :
6851050
Link To Document :
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