Simulation study on the information storage mechanism of STT-MRAM

Author

Hu Zuoqi ; Liang Wen ; Xu Jian ; Yu Fafa ; Cao Hua ; Lu Jingjing ; Li Xixi ; Miao Xiangshui

Author_Institution

Sch. of Opt. & Electron. Inf., Huazhong Univ. of Sci. & Technol. Wuhan, Wuhan, China

fYear

2013

fDate

12-14 Aug. 2013

Firstpage

1

Lastpage

4

Abstract

Spin transfer torque magnetic random access memory (STT-MRAM )[1-3] is a new type of memory that directly reversing the magnetic moment of nano-magnet by spin-polarized current to realize data storage. In this paper, the information storage mechanism of STT-MRAM and the precession reversal of the magnetic moment in the free layer of magnetic tunnel junction (MTJ) were studied and simulated based on the LLGS equation[4, 5]. As showed in the simulation results, the time needed to reverse the magnetic moment, the current density and the magnetic moment´s motion track are affected by the saturation magnetization, and the thickness, shape and damping of the free layer. With reasonable parameters, the writing time can be controlled in the range of 1×10^-9 to 5×10^-9 s with the programming current density at the level of 10¹⁰ A/m².

Keywords

current density; magnetic moments; magnetic storage; magnetic tunnelling; magnetisation; random-access storage; spin polarised transport; LLGS equation; MTJ; STT-MRAM; current density; information storage mechanism; magnetic moment; magnetic tunnel junction; saturation magnetization; spin polarized current; spin transfer torque magnetic random access memory; Current density; Damping; Magnetic moments; Magnetic tunneling; Magnetization; Mathematical model; Saturation magnetization; STT-MRAM; numerical simulation; spin-polarized current; the LLGS equation;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Memory Technology Symposium (NVMTS), 2013 13th

Conference_Location

Minneapolis, MN

Type

conf

DOI

10.1109/NVMTS.2013.6851057

Filename

6851057