Title :
A 1.8-V 4.36-ppm/°C-TC bandgap reference with temperature variation calibration
Author :
Wei-Bin Yang ; Horng-Yuan Shih ; Yu-Yao Lin ; Ming-Hao Hong ; Chi-Hsiung Wang ; Yu-Lung Lo
Author_Institution :
Dept. of Electr. Eng., Tamkang Univ., Taipei, Taiwan
Abstract :
A bandgap reference generator with a compensation circuit against temperature variation is presented. The bandgap reference generator provides a reference current of 10μA with temperature coefficient (TC) of only 4.36ppm/°C under temperature range from -40 to 125°C. The chip is fabricated in a 0.18-μm standard CMOS process with a 1.8V power supply voltage, and the active die area is 0.008mm2.
Keywords :
CMOS integrated circuits; compensation; reference circuits; active die area; bandgap reference generator; compensation circuit; current 10 muA; reference current; size 0.008 mm; size 0.18 mum; standard CMOS process; temperature -40 C to 125 C; temperature coefficient; temperature variation calibration; voltage 1.8 V; CMOS integrated circuits; Mirrors; Photonic band gap; Temperature distribution; Temperature measurement; Transistors; bandgap; current reference; temperature coefficient; temperature compensated;
Conference_Titel :
SoC Design Conference (ISOCC), 2013 International
Conference_Location :
Busan
DOI :
10.1109/ISOCC.2013.6863997