Low power, highly linear, low noise amplifier (LNA) for Ultra-Wideband applications

fYear

2013

fDate

17-19 Nov. 2013

Firstpage

345

Lastpage

348

Abstract

One of the important components of a receiver is the low noise amplifier (LNA). The challenges of LNA design include ability to achieve high gain, low noise figure and better linearity at low power consumption within the required frequency. In this paper, our design is based on Impulse Response (IR) Ultra-Wideband (UWB) transceiver operating at 3.1-4.6GHz. Hence the LNA designed has been optimized for Low noise figure, considerably high gain and better linearity at low power consumption, which make it suitable for implant-able radio application. The process technology used here is 0.25μm CMOS Silanna process.

Keywords

CMOS analogue integrated circuits; low noise amplifiers; low-power electronics; microwave amplifiers; microwave integrated circuits; radio transceivers; transient response; CMOS Silanna process; IR transceiver; LNA design; UWB transceiver; frequency 3.1 GHz to 4.6 GHz; implantable radio application; impulse response transceiver; low noise amplifier; low power consumption; size 0.25 mum; ultrawideband applications; CMOS integrated circuits; CMOS technology; Gain; Impedance matching; Linearity; Noise; Topology; Low noise amplifier; Ultra Wide-Band; linearity; low power;

fLanguage

English

Publisher

ieee

Conference_Titel

SoC Design Conference (ISOCC), 2013 International

Conference_Location

Busan

Type

conf

DOI

10.1109/ISOCC.2013.6864046

Filename

6864046