Design of rectifier with comparator using unbalanced body biasing for wireless power transfer

Author

Byeong Wan Ha ; Choon Sik Cho

Author_Institution

Sch. of Electron., Telecommun. & Comput. Eng., Korea Aerosp. Univ., Goyang, South Korea

fYear

2013

fDate

17-19 Nov. 2013

Firstpage

356

Lastpage

359

Abstract

This paper presents a rectifier with comparator using unbalanced body biasing for wireless power transfer in 0.11μm RF CMOS process. The proposed rectifier is composed of MOSFETs and two comparators. The comparator is used to reduce reverse leakage current occurring when the load DC voltage is higher than input RF voltage. For this purpose, unbalanced body biasing is devised. 0.837V sinusoidal RF input is rectified to 0.755V DC voltage, leading to 90% voltage conversion efficiency (VCE) at maximum. 13.56 MHz signal is used for input, and this circuit works up to 150 MHz signal keeping above 80% VCE.

Keywords

CMOS integrated circuits; comparators (circuits); inductive power transmission; radiofrequency integrated circuits; radiofrequency power transmission; rectifying circuits; MOSFETs; RF CMOS process; comparator; frequency 13.56 MHz; input RF voltage; load DC voltage; rectifier design; reverse leakage current reduction; sinusoidal RF input; size 0.11 mum; unbalanced body biasing; voltage 0.837 V to 0.755 V; wireless power transfer; Leakage currents; MOSFET; Rectifiers; Schottky diodes; Threshold voltage; Voltage measurement; Wireless communication; Body biasing; Comparator; Power conversion efficiency (PCE); Rectifier; Voltage conversion efficiency (VCE); Wireless power transfer;

fLanguage

English

Publisher

ieee

Conference_Titel

SoC Design Conference (ISOCC), 2013 International

Conference_Location

Busan

Type

conf

DOI

10.1109/ISOCC.2013.6864049

Filename

6864049