Source follower based single ended sense amplifier for large capacity SRAM

Author

Dong-Hoon Jung ; Hanwool Jeong ; Taejoong Song ; Gyuhong Kim ; Seong-Ook Jung

Author_Institution

Sch. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea

fYear

2013

fDate

17-19 Nov. 2013

Firstpage

364

Lastpage

367

Abstract

In this paper we proposed a source follower based single ended sense amplifier (SA) which enhance the access time using positive feedback. The source follower stage is used to transfer the bit-line (BL) development to sensing stage. By using the source follower, biasing of the sensing circuit during the precharge phase becomes faster. In addition, positive feedback is applied to the source follower stage to enhance the access time of the SRAM macro with the large number of cells per bit-line (CpBL). The proposed source follower based SA is designed and verified using 45nm CMOS process. More than to 12% of access time enhancement is achieved compared to conventional structures.

Keywords

CMOS memory circuits; SRAM chips; amplifiers; BL development; CMOS process; SRAM macro; access time enhancement; bit-line development; large-capacity SRAM; positive feedback; precharge phase; sensing stage; size 45 nm; source follower stage; source follower-based single-ended SA; source follower-based single-ended sense amplifier; Capacitance; Capacitors; Couplings; MOS devices; SRAM cells; Sensors; 8T SRAM; Bit-Line sensing; Single-Ended Sense Amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

SoC Design Conference (ISOCC), 2013 International

Conference_Location

Busan

Type

conf

DOI

10.1109/ISOCC.2013.6864051

Filename

6864051