DocumentCode :
692938
Title :
Low-temperature, low vapor pressure bonding method for thin diamond films
Author :
Hanna, J.M. ; Shaw, J.L. ; Wood, Frank ; Yater, J.E. ; Feygelson, Tatyana ; Pate, Bradford B.
Author_Institution :
BeamWave Res., Inc., Bethesda, MD, USA
fYear :
2013
fDate :
8-12 July 2013
Firstpage :
1
Lastpage :
2
Abstract :
We describe a method to bond thin diamond films to diamond substrates without contaminating the exposed diamond surface with bonding metals, such that the surface may be hydrogen-terminated to acquire negative electron affinity.
Keywords :
bonding processes; diamond; electron affinity; thin films; vapour pressure; C; diamond substrate; hydrogen-termination; low-temperature low vapor pressure bonding method; negative electron affinity; surface metal bonding; thin diamond film; Bonding; Diamonds; Films; Substrates; Surface treatment; Tin; NEA; Negative Electron Affinity; TLP; Transient Liquid Phase; bond; diamond; electron; emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2013 26th International
Conference_Location :
Roanoke, VA
Type :
conf
DOI :
10.1109/IVNC.2013.6882393
Filename :
6882393
Link To Document :
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