Structural enhancement of ZnO thin films by sol-gel process for photonic applications

Author

Kumar, Sudhakar ; Kapoor, Ajay ; Singh, Fouran

Author_Institution

Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India

fYear

2013

fDate

17-18 Dec. 2013

Firstpage

1

Lastpage

2

Abstract

Zinc oxide (ZnO) thin film is grown on glass substrate by the sol-gel spin coating technique. The prepared film annealed at 450 °C. X-ray diffraction shows that the ZnO Film is polycrystalline with (002) preferential orientation. We have found the Surface roughness was minimum (12.4 nm) by atomic force microscopy. The optical band gap is found to be 3.12±0.01 eV by UV-visible Spectroscopy. The Wave guiding properties of the thin film has been also studied. The results indicate that our film is monomode at 632.8 nm with propagation optical loss estimated around 1.6 dB/cm.

Keywords

II-VI semiconductors; X-ray diffraction; annealing; atomic force microscopy; optical constants; optical losses; semiconductor growth; semiconductor thin films; sol-gel processing; spin coating; surface roughness; texture; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; (002) preferential orientation; SiO₂; UV-visible spectroscopy; ZnO; atomic force microscopy; glass substrate; monomode film; optical band gap; photonic applications; polycrystalline film; propagation optical loss; sol-gel spin coating technique; structural enhancement; surface roughness; temperature 450 degC; thin films; wave guiding properties; Annealing; Atomic measurements; Films; Microprocessors; TV; Atomic force microscopy; UV-Visible Spectroscopy; ZnO thin Film;

fLanguage

English

Publisher

ieee

Conference_Titel

Recent Advances in Photonics (WRAP), 2013 Workshop on

Conference_Location

New Delhi

Print_ISBN

978-1-4799-4864-2

Type

conf

DOI

10.1109/WRAP.2013.6917684

Filename

6917684