DocumentCode :
69489
Title :
High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and 
Tunability
Author :
Sang-Hyeon Kim ; Yokoyama, Masafumi ; Nakane, Ryosho ; Ichikawa, Osamu ; Osada, Takenori ; Hata, Masahiko ; Takenaka, Mitsuru ; Takagi, Shinichi
Author_Institution :
Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan
Volume :
61
Issue :
5
fYear :
2014
fDate :
May-14
Firstpage :
1354
Lastpage :
1360
Abstract :
We have investigated the effects of the tri-gate channel structure on electrical properties of extremely thin-body (ETB) InAs-on-insulator (-OI) MOSFETs. It was found that the tri-gate structure provides significant improvement in short channel effect (SCE) control even in ETB-OI MOSFETs by the simulation. We have fabricated and demonstrated tri-gate InAsOI MOSFETs with fin width of the top surface down to 40 nm. The tri-gate ETB InAs-OI MOSFETs shows better SCEs control with small effective mobility (μeff) reduction. Thus, we have demonstrated the operation of sub-20-nm-channel length (Lch) InAs-OI MOSFETs. The 20-nm-Lch InAs-OI MOSFETs show good electrostatic with subthreshold slope of 120 mV/decade and drain induced barrier lowering of 110 mV/V, and high transconductance (Gm) of 1.64 mS/μm. Furthermore, we have realized a wide-range threshold voltage (Vth) tunability in tri-gate InAs-OI MOSFETs through back bias voltage (VB) control.
Keywords :
III-V semiconductors; MOSFET; indium compounds; DIBL; InAs; MOSFET; SCE; back bias voltage control; drain induced barrier lowering; effective mobility reduction; short channel effect immunity; size 20 nm; subthreshold slope; threshold voltage tunability; tri-gate channel structure; tri-gate extremely thin-body InAs-on-insulator; Capacitance; Etching; Logic gates; MOSFET; Metals; Performance evaluation; Silicon; ${{V}}_{{{rm th}}}$ tenability; Body factor; InGaAs MOSFETs; Ni-InGaAs S/D; Vth tenability.; extremely thin-body (ETB) MOSFETs; metal source and drain (S/D); tri-gate;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2014.2312546
Filename :
6784462
Link To Document :
