Electrical characterization of MIS devices by varying the semiconductor layer thickness

This paper investigates the electrical properties of metal-insulator-semiconductor (MIS) by varying the thickness of the semiconductor layer. The MIS device was fabricated using ZnO and PMMA: TiO₂ nanocomposite as semiconductor and dielectric layer, respectively. Different thickness of ZnO films was obtained by varying the deposition speed from 500 to 3000 rpm. The electrical properties of MIS showed different I-V curve when using different thickness of the semiconductor layer. The AFM image of all ZnO films showed different morphology when using different deposition speed. The surface roughness of ZnO films were increased as the deposition speed decreased. Meanwhile the PMMA: TiO₂ nanocomposite dielectric film was observed to have porous surface. The agglomeration of TiO₂ also can be seen thus indicates that TiO₂ did not dissolve in PMMA.