A New Voltage Driving Scheme to Suppress Non-Idealities of Polycrystalline Thin-Film Transistors for AMOLED Displays

Author

Wenjiang Liu ; Guangyu Yao ; Chen Jiang ; Qingyu Cui ; Xiaojun Guo

Author_Institution

Dept. of Electron. Eng., Shanghai Jiao Tong Univ., Shanghai, China

Volume

10

Issue

12

fYear

2014

fDate

Dec. 2014

Firstpage

991

Lastpage

994

Abstract

This paper presents a new voltage driving scheme with current feedback for polycrystalline silicon (poly-Si) thin-film transistors (TFTs) to drive active matrix organic light-emitting diode (AMOLED) displays. The pixel circuit is relatively simple, which is composed of 3 TFTs and 1 capacitor. Circuit simulation results show that the proposed driving scheme can effectively suppress the influence of nonidealities of typical poly-Si TFTs including kink effects, spatial nonuniformity of the electrical characteristics. This method also presents a settling time less than 3 μs with panel load of 100 pF/1.5 kΩ at all OLED current levels.

Keywords

LED displays; elemental semiconductors; organic light emitting diodes; silicon; thin film transistors; AMOLED displays; OLED current levels; active matrix organic light-emitting diode displays; capacitance 100 pF; circuit simulation; current feedback; electrical characteristics; kink effects; nonideality suppression; panel load; pixel circuit; polycrystalline TFT; polycrystalline silicon thin-film transistors; resistance 1.5 kohm; settling time; spatial nonuniformity; voltage driving scheme; Active matrix organic light emitting diodes; Capacitors; Electric variables; Silicon; Thin film transistors; Active-matrix organic light-emitting diode (AMOLED); current feedback; low temperature polycrystalline silicon (LTPS); thin-film transistor (TFT);

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2014.2331986

Filename

6843882