Title :
Self-thermal protecting power MOSFETs
Author :
Tsuzuki, Y. ; Yamaoka, M. ; Kawamoto, K.
Author_Institution :
IC Department, Nippondenso Co., Ltd., 1-1 showa-cho, Kariya-Shi, Aichi-Ken 448, Japan
Abstract :
A power MOSFET which cuts off current surges itself at critical high temperatures and never breaks or fails thermally has been developed. The thermal sensors consist of PN junction diodes built into the polysilicon layers on the oxides of conventional DMOSFETs.
Keywords :
Junctions; MOSFET; Semiconductor optical amplifiers; Temperature; Temperature sensors;
Conference_Titel :
Power Electronics Specialists Conference, 1987 IEEE
Conference_Location :
Blacksburg, VA, USA
DOI :
10.1109/PESC.1987.7077160
