DocumentCode
697687
Title
Self-thermal protecting power MOSFETs
Author
Tsuzuki, Y. ; Yamaoka, M. ; Kawamoto, K.
Author_Institution
IC Department, Nippondenso Co., Ltd., 1-1 showa-cho, Kariya-Shi, Aichi-Ken 448, Japan
fYear
1987
fDate
21-26 June 1987
Firstpage
31
Lastpage
36
Abstract
A power MOSFET which cuts off current surges itself at critical high temperatures and never breaks or fails thermally has been developed. The thermal sensors consist of PN junction diodes built into the polysilicon layers on the oxides of conventional DMOSFETs.
Keywords
Junctions; MOSFET; Semiconductor optical amplifiers; Temperature; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1987 IEEE
Conference_Location
Blacksburg, VA, USA
ISSN
0275-9306
Type
conf
DOI
10.1109/PESC.1987.7077160
Filename
7077160
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