Title :
Application of IGT/COMFET to zero-current switching resonant converters
Author :
Rangan, R. ; Chen, D.Y. ; Yang, J. ; Lee, J.
Author_Institution :
Department of Electrical Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061
Abstract :
The problems associated with IGT/COMFET devices in PWM converters, such as turn-off current tailing and turn-off latching are largely avoided in a zero current switching resonant converter. Dv/dt induced phenomena, such as the power losses and latching, are identified as the predominant problems in using IGT/COMFET devices for very high frequency resonant operation.
Keywords :
MOSFET; Pulse width modulation converters; Resonant frequency; Schottky diodes; Switches; Zero current switching;
Conference_Titel :
Power Electronics Specialists Conference, 1987 IEEE
Conference_Location :
Blacksburg, VA, USA
DOI :
10.1109/PESC.1987.7077164
