DocumentCode
697691
Title
A low capacitance power MOSFET with an integral gate driver
Author
Bernstein, Joseph B. ; Bahl, Sandeep ; Schlecht, Martin F.
Author_Institution
Laboratory for Electromagnetic and Electronic Systems, Massachusetts Institute of Technology
fYear
1987
fDate
21-26 June 1987
Firstpage
61
Lastpage
68
Abstract
For efficient operation in the 10 MHz range, a resonant power converter needs a power MOSFET with very low capacitance for a given on-state resistance and an integral turn-off driver. The former allows the resonant frequency to be high and the gate drive losses low, while the latter avoids the parasitic inductance of bond wires used to connect the gate to an external driver. The reasons and methods for making such a MOSFET are presented in this paper.
Keywords
Capacitance; Capacitors; Impedance; Inductance; Logic gates; MOSFET; Resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1987 IEEE
Conference_Location
Blacksburg, VA, USA
ISSN
0275-9306
Type
conf
DOI
10.1109/PESC.1987.7077165
Filename
7077165
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