Title :
A high performance FBSOA tester for bipolar transistors with extended SOA
Author :
Lorenz, L. ; Reinmuth, K.
Author_Institution :
Siemens, Power Semiconductor Division Frankfurter Ring 152, 8000 München 46
Abstract :
This paper presents a non-destructive testing method for bipolar transistors and, in particular, for very rapid bipolar transistors such as the SIRET. The SIRET is a bipolar transistor with very short switching and storage times and, due to the extremely short emitter widths, has an extended SOA range. This work also discusses the limit load curves (FBSOA, FBAOA, RBSOA) of conventional bipolar transistors and of the SIRET. In particular, this paper examines why the FBSOA range is of particular importance for transistors with very short turn-on times. Finally, it will examine the requirements demanded of the test equipment and will discuss test results obtained.
Keywords :
Bipolar transistors; Current measurement; Electric breakdown; Power dissipation; Semiconductor optical amplifiers; Switching circuits; Transistors;
Conference_Titel :
Power Electronics Specialists Conference, 1987 IEEE
Conference_Location :
Blacksburg, VA, USA
DOI :
10.1109/PESC.1987.7077169