DocumentCode :
69879
Title :
Effect of Reduced Cu(InGa)(SeS) 
Thickness Using Three-Step H Se/Ar/H
Author :
Kim, Kihwan ; Park, Hyeonwook ; Kim, Woo Kyoung ; Hanket, Gregory M. ; Shafarman, William N.
Author_Institution :
Inst. of Energy Conversion, Univ. of Delaware, Newark, DE, USA
Volume :
3
Issue :
1
fYear :
2013
fDate :
Jan. 2013
Firstpage :
446
Lastpage :
450
Abstract :
Cu(In,Ga)(Se,S)2 (CIGSS) absorbers with thicknesses from 1.9 to 0.25 μm have been grown using a three-step selenization/Ar-anneal/sulfization reaction of Cu-In-Ga metal precursors. Material characterization revealed changes in orientation, apparent grain size, and formation of voids at the Mo/CIGSS interface with reduced thickness. Even with absorber thickness decreased to 0.25 μm and lateral compositional nonuniformity, VOC and fill factor were nearly sustained, while JSC decreased due to incomplete absorption. With the 0.25-μm-thick absorber layer, an efficiency of 9.1% (without AR coating) with VOC = 612 mV, JSC = 21.0 mA/cm2, and FF = 71.1% was obtained.
Keywords :
annealing; copper compounds; gallium compounds; grain size; indium compounds; semiconductor diodes; semiconductor growth; semiconductor thin films; solar cells; ternary semiconductors; voids (solid); CIGSS absorbers; Cu(InGa)(SeS)2; Cu-In-Ga metal precursor; Mo-CIGSS interface; absorber layer; absorber thickness; apparent grain size; fill factor; lateral compositional nonuniformity; material characterization; reduced CIGSS thickness effect; size 0.25 mum to 1.9 mum; three-step selenization/Ar-anneal/sulfization reaction; void formation; voltage 612 mV; Absorption; Adhesives; Argon; Metals; Photovoltaic cells; Photovoltaic systems; Diode; energy conversion; inorganic compound; photovoltaic cells; thin-film devices;
fLanguage :
English
Journal_Title :
Photovoltaics, IEEE Journal of
Publisher :
ieee
ISSN :
2156-3381
Type :
jour
DOI :
10.1109/JPHOTOV.2012.2219501
Filename :
6355592
Link To Document :
