DocumentCode
69879
Title
Effect of Reduced Cu(InGa)(SeS) 
Thickness Using Three-Step H Se/Ar/H
Author
Kim, Kihwan ; Park, Hyeonwook ; Kim, Woo Kyoung ; Hanket, Gregory M. ; Shafarman, William N.
Author_Institution
Inst. of Energy Conversion, Univ. of Delaware, Newark, DE, USA
Volume
3
Issue
1
fYear
2013
fDate
Jan. 2013
Firstpage
446
Lastpage
450
Abstract
Cu(In,Ga)(Se,S)2 (CIGSS) absorbers with thicknesses from 1.9 to 0.25 μm have been grown using a three-step selenization/Ar-anneal/sulfization reaction of Cu-In-Ga metal precursors. Material characterization revealed changes in orientation, apparent grain size, and formation of voids at the Mo/CIGSS interface with reduced thickness. Even with absorber thickness decreased to 0.25 μm and lateral compositional nonuniformity, VOC and fill factor were nearly sustained, while JSC decreased due to incomplete absorption. With the 0.25-μm-thick absorber layer, an efficiency of 9.1% (without AR coating) with VOC = 612 mV, JSC = 21.0 mA/cm2, and FF = 71.1% was obtained.
Keywords
annealing; copper compounds; gallium compounds; grain size; indium compounds; semiconductor diodes; semiconductor growth; semiconductor thin films; solar cells; ternary semiconductors; voids (solid); CIGSS absorbers; Cu(InGa)(SeS)2; Cu-In-Ga metal precursor; Mo-CIGSS interface; absorber layer; absorber thickness; apparent grain size; fill factor; lateral compositional nonuniformity; material characterization; reduced CIGSS thickness effect; size 0.25 mum to 1.9 mum; three-step selenization/Ar-anneal/sulfization reaction; void formation; voltage 612 mV; Absorption; Adhesives; Argon; Metals; Photovoltaic cells; Photovoltaic systems; Diode; energy conversion; inorganic compound; photovoltaic cells; thin-film devices;
fLanguage
English
Journal_Title
Photovoltaics, IEEE Journal of
Publisher
ieee
ISSN
2156-3381
Type
jour
DOI
10.1109/JPHOTOV.2012.2219501
Filename
6355592
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