Title :
Charge Compensation by Excess Oxygen in Amorphous In–Ga–Zn–O Films Deposited by Pulsed Laser Deposition
Author :
Orui, Takatoshi ; Herms, Johannes ; Hanyu, Yuichiro ; Ueda, Shigenori ; Watanabe, Ken ; Sakaguchi, Isao ; Ohashi, Naoki ; Hiramatsu, Hidenori ; Kumomi, Hideya ; Hosono, Hideo ; Kamiya, Toshio
Author_Institution :
Mater. & Struct. Lab., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
We investigated effects of base pressure (Pbase)of the deposition chamber on electrical properties and defect states of amorphous In-Ga-Zn-O (a-IGZO) thin films deposited by pulsed laser deposition. The impurity hydrogen concentration was increased by an order of magnitude when was deteriorated from <;10-5 to 10-3 Pa. The optimum oxygen partial pressures were 2-4 Pa for an optimized deposition condition with the good Pbase; on the other hand, off-optimized and/or poor Pbase require much higher PO2. This result provides an experimental evidence for a charge compensation model by excess oxygen for H-containing a-IGZO. Thermal desorption spectra indicated that the impurity hydrogens originate mainly from water molecules in the residual gas and exist as -OH chemical bonding states in the a-IGZO films. Hard X-ray photoemission spectroscopy revealed that these -OH states form deep defects above the valence band maximum.
Keywords :
II-VI semiconductors; X-ray photoelectron spectra; amorphous semiconductors; charge compensation; defect states; desorption; electrical conductivity; gallium compounds; indium compounds; pulsed laser deposition; semiconductor thin films; thin film transistors; valence bands; wide band gap semiconductors; zinc compounds; -OH chemical bonding state; In-Ga-Zn-O; X-ray photoemission spectroscopy; amorphous -IGZO thin film deposition; base pressure effect; charge compensation; charge compensation model; defect state; deposition chamber; electrical properties; impurity hydrogen concentration; pressure 2 Pa to 4 Pa; pulsed laser deposition; residual gas; thermal desorption spectra; valence band; water molecules; Chemicals; Films; Hydrogen; Impurities; Thin film transistors; Water; Amorphous oxide semiconductors; charge compensation; deep defects; donor; hard X-ray photoemission spectroscopy; impurity hydrogen; impurity water; thin-film transistors (TFTs);
Journal_Title :
Display Technology, Journal of
DOI :
10.1109/JDT.2014.2358251