Investigation of Single-Event Damages on Silicon Carbide (SiC) Power MOSFETs

Author

Mizuta, Eiichi ; Kuboyama, Satoshi ; Abe, H. ; Iwata, Yoshiyuki ; Tamura, Takuya

Author_Institution

Japan Aerosp. Exploration Agency, Tsukuba, Japan

Volume

61

Issue

4

fYear

2014

fDate

Aug. 2014

Firstpage

1924

Lastpage

1928

Abstract

Radiation effects were demonstrably observed in silicon carbide power MOSFETs caused by heavy ion and proton irradiation. For higher LET ions, permanent damage (increase in both drain and gate leakage current) was observed similar to SiC Schottky Barrier diodes in our previous study. For lower LET ions, including protons, Single Event Burnouts (SEBs) were observed and there was no leakage current increase just before SEBs. The phenomenon is unique for SiC devices.

Keywords

Schottky barriers; leakage currents; power MOSFET; radiation hardening (electronics); silicon compounds; wide band gap semiconductors; Schottky barrier diodes; SiC; gate leakage current; heavy ion irradiation; power MOSFET; proton irradiation; radiation effects; single event burnouts; single-event damages; Current measurement; Ions; Leakage currents; MOSFET; Protons; Radiation effects; Silicon carbide; Heavy ions; SiC; power MOSFETs; radiation damage; silicon carbide; single-event effects;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2014.2336911

Filename

6869046