• DocumentCode
    702291
  • Title

    Enhancing system-wide power integrity in 3D ICs with power gating

  • Author

    Hailang Wang ; Salman, Emre

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Stony Brook Univ., Stony Brook, NY, USA
  • fYear
    2015
  • fDate
    2-4 March 2015
  • Firstpage
    322
  • Lastpage
    326
  • Abstract
    Power gating is a commonly used method to reduce subthreshold leakage current in nanoscale technologies. In through silicon via (TSV) based three-dimensional (3D) integrated circuits (ICs), power gating can significantly degrade system-wide power integrity since the decoupling capacitance associated with the power gated block/plane becomes ineffective for neighboring active planes, as demonstrated in this paper. A reconfig-urable decoupling capacitor topology is investigated to alleviate this issue by exploiting the ability of via-last TSVs to bypass plane-level power networks when delivering the supply voltage. Reconfigurable decoupling capacitors placed within a plane can provide charge to neighboring planes even when the plane is power gated, thereby significantly reducing both RMS power supply noise (by up to 46%) and RMS power gating (in-rush current) noise (by up to 85%) at the expense of a slight increase in area (by 1.55%) and peak power consumption (by 1.36%).
  • Keywords
    integrated circuit interconnections; leakage currents; nanotechnology; network topology; three-dimensional integrated circuits; 3D IC; 3D integrated circuits; TSV; bypass plane-level power networks; nanoscale technologies; power gating; reconfigurable decoupling capacitor topology; subthreshold leakage current reduction; system-wide power integrity; through silicon via; Capacitors; Logic gates; Noise; Switching circuits; Three-dimensional displays; Through-silicon vias; Topology; 3D IC; Power delivery; power gating;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design (ISQED), 2015 16th International Symposium on
  • Conference_Location
    Santa Clara, CA
  • Print_ISBN
    978-1-4799-7580-8
  • Type

    conf

  • DOI
    10.1109/ISQED.2015.7085447
  • Filename
    7085447