• DocumentCode
    702832
  • Title

    Effect of the blistering of ALD Al2O3 films on the silicon surface in Al-Al2O3-Si structures

  • Author

    Acero, M.C. ; Beldarrain, O. ; Duch, M. ; Zabala, M. ; Gonzalez, M.B. ; Campabadal, F.

  • Author_Institution
    Inst. de Microelectron. de Barcelona, Barcelona, Spain
  • fYear
    2015
  • fDate
    11-13 Feb. 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Blistering of 11 nm and 45 nm-thick Al2O3 layers deposited by ALD on silicon substrates is studied in Al-Al2O3-Si structures fabricated using a field isolated process. Blisters are shown to be unevenly distributed and with different dimensions depending on the structure area. After chemical etching down to silicon, round voids are revealed underneath the blisters depending on the etchant used, indicating that some chemical reaction occurs at the Al2O3-Si interface at the blistered sites.
  • Keywords
    aluminium compounds; atomic layer deposition; etching; thin films; voids (solid); ALD; Al2O3; Si; blistering effect; chemical etching; chemical reaction; silicon surface; size 11 nm; size 45 nm; thin films; voids; Aluminum oxide; Annealing; Chemicals; Etching; Passivation; Silicon; ALD; Al2O3; blistering; silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices (CDE), 2015 10th Spanish Conference on
  • Conference_Location
    Madrid
  • Type

    conf

  • DOI
    10.1109/CDE.2015.7087443
  • Filename
    7087443
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=702832