Floating-body-correlated subthreshold behavior of SOI NMOS device considering back-gate-bias effect

Author

Hu, S.K. ; Ma, M.M. ; Kuo, J.B. ; Chen, Y.J.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2015

fDate

11-13 Feb. 2015

Firstpage

1

Lastpage

5

Abstract

This paper reports the floating-body-correlated subthreshold behavior of the SOI NMOS device considering the back-gate-bias effect. As verified by the experimentally measured data, when the channel length shrinks from 1μm to 120nm, the subthreshold slope becomes steeper due to the dominance of the parasitic BJT in the thin film. For the channel length becomes smaller further to 60nm, the subthreshold slope becomes less steep as a result of the dominating DIBL effect in the MOS channel region. As the device is biased at the back gate bias of 10V, for a long channel, the subthreshold slope is improved due to the enhanced function of the parasitic BJT and for a short channel of 60nm, the subthreshold slope is not improved substantially due to the dominance of DIBL.

Keywords

MOSFET; bipolar transistors; silicon-on-insulator; thin films; DIBL effect; MOS channel region; SOI NMOS device; Si; back-gate-bias effect; channel length; drain induced barrier lowering; floating-body-correlated subthreshold behavior; parasitic BJT; size 60 nm; subthreshold slope; thin film; Logic gates; MOS devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2015 10th Spanish Conference on

Conference_Location

Madrid

Type

conf

DOI

10.1109/CDE.2015.7087450

Filename

7087450