Implementation of numerical methods for nanoscaled semiconductor device simulation using OpenCL

Author

Coronado-Barrientos, E. ; Garcia-Loureiro, A. ; Indalecio, G. ; Seoane, N.

Author_Institution

Centro de Investig. en Tecnoloxias da Informacion (CiTIUS), Univ. de Santiago de Compostela, Santiago de Compostela, Spain

fYear

2015

fDate

11-13 Feb. 2015

Firstpage

1

Lastpage

4

Abstract

The present work implements solvers with OpenCL of the FGMRES and preconditioned BCGSTAB algorithms. These solvers are integrated in a 3-D simulation tool of nanoscaled MOSFET transistors. Simulations are launched in two different platform devices: NVIDIA Tesla S2050 and Intel Xeon Phi 3120A. The resulting times of execution are compared against the optimized PSPARSLIB version of the FGMRES solver. The results showed that a large computational charge compensate the overhead due to the data transfer time.

Keywords

electronic engineering computing; nanoelectronics; semiconductor device models; 3D simulation; FGMRES algorithm; Intel Xeon Phi 3120A; NVIDIA Tesla S2050; OpenCL; nanoscaled MOSFET transistor; nanoscaled semiconductor device simulation; preconditioned BCGSTAB algorithm; Computational modeling; Coprocessors; Integrated circuit modeling; Kernel; Mathematical model; Numerical models; Runtime;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2015 10th Spanish Conference on

Conference_Location

Madrid

Type

conf

DOI

10.1109/CDE.2015.7087476

Filename

7087476