Title :
Distinguishing conductive filament and non-localized gate conduction in resistive switching devices
Author :
Maestro, M. ; Crespo-Yepes, A. ; Martin-Martinez, J. ; Claramunt, S. ; Rodriguez, R. ; Nafria, M. ; Aymerich, X.
Author_Institution :
Dept. d´Eng. Electron., Univ. Autonoma de Barcelona (UAB), Barcelona, Spain
Abstract :
A method to separate the localized current through the conductive filament from the area distributed gate current at high resistance state in resistive switching (RS) devices is presented. The method uses MOSFETs as RS devices and it is based in the evaluation of the location of the filament along the transistor channel.
Keywords :
field effect transistor switches; MOSFET; RS device; area distributed gate current; conductive filament; high resistance state; localized current separate; metal-oxide-semiconductor field-effect transistor; nonlocalized gate conduction; resistive switching device; transistor channel; Electron devices; Logic gates; Metals; Switches; Resistive switching; conductive filament; high resistance state; reset;
Conference_Titel :
Electron Devices (CDE), 2015 10th Spanish Conference on
Conference_Location :
Madrid
DOI :
10.1109/CDE.2015.7087498
