DocumentCode :
70352
Title :
Proposing a Numerical Method for Evaluating the Effects of Both Magnetic Properties and Power Semiconductor Properties Under Inverter Excitation
Author :
Odawara, Shunya ; FUJISAKI, Keisuke ; Ikeda, Fumiaki
Author_Institution :
Toyota Technol. Inst., Nagoya, Japan
Volume :
50
Issue :
11
fYear :
2014
fDate :
Nov. 2014
Firstpage :
1
Lastpage :
4
Abstract :
To evaluate how magnetic properties of magnetic materials are influenced by power semiconductor properties in an inverter circuit, we propose and test a new numerical calculation method. This method combines an electrical circuit analysis for current-voltage properties of power semiconductors with a magnetic analysis based on a magnetic hysteresis model. Previous measurements on an inverter show that magnetic properties, such as B-H curves (B is the magnetic flux density and H is the magnetic field intensity) and iron losses, are affected by ON-voltages of power semiconductors. Those measurements motivate this paper. The magnetic hysteresis model used here is a novel approach that is based on physical thermodynamics theory and can capture the essence of physical magnetic phenomena. Calculations with the proposed method show that measured minor loops in B-H curves are well represented and calculated voltage waveforms properly capture ON-voltage effects.
Keywords :
PWM invertors; free energy; magnetic circuits; magnetic flux; magnetic hysteresis; numerical analysis; power semiconductor devices; semiconductor device models; B-H curves; ON-voltage effects; current-voltage properties; electrical circuit analysis; inverter circuit; magnetic field intensity; magnetic flux density; magnetic hysteresis model; magnetic properties; numerical calculation method; physical thermodynamics theory; power semiconductor properties; voltage waveforms; Inverters; Magnetic analysis; Magnetic hysteresis; Magnetic properties; Mathematical model; Semiconductor device measurement; Semiconductor device modeling; Inverter excitation; magnetic property; physical free energy model; semiconductor property;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2014.2327236
Filename :
6971526
Link To Document :
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