• DocumentCode
    703798
  • Title

    An energy efficient backup scheme with low inrush current for nonvolatile SRAM in energy harvesting sensor nodes

  • Author

    Hehe Li ; Yongpan Liu ; Qinghang Zhao ; Yizi Gu ; Xiao Sheng ; Guangyu Sun ; Chao Zhang ; Meng-Fan Chang ; Rong Luo ; Huazhong Yang

  • Author_Institution
    Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
  • fYear
    2015
  • fDate
    9-13 March 2015
  • Firstpage
    7
  • Lastpage
    12
  • Abstract
    In modern energy harvesting sensor nodes, nonvolatile SRAM (nvSRAM) has been widely investigated as a promising on-chip memory architecture because of its zero standby power, resilience to power failures, and fast read/write operations. However, conventional approaches transfer all data from SRAM into NVM during the backup process. Thus, large on-chip energy storage capacitors are normally required. In addition, high peak inrush current is generated instantaneously, which has a negative impact on energy efficiency and circuit reliability. To mitigate these problems, we propose a novel holistic backup flow, which consists of a partial backup process and a run-time pre-writeback scheme for nvSRAM based caches. A statistics based dead-block predictor is employed to achieve a fast and low power partial backup process. We also present an adaptive pre-writeback point allocation strategy to further reduce the backup load. Simulation results show that, with our proposed backup scheme, energy storage capacitance is reduced by 34% and inrush current is reduced by 54% on average compared to the conventional full backup scheme.
  • Keywords
    SRAM chips; capacitor storage; electric sensing devices; energy conservation; energy harvesting; energy measurement; integrated circuit reliability; statistical analysis; NVM; adaptive pre-writeback point allocation strategy; circuit reliability; energy efficient backup scheme; energy harvesting sensor node; fast read-write operation; low inrush current; nonvolatile SRAM; nvSRAM based cache; on-chip energy storage capacitor; on-chip memory architecture; partial backup process; run-time pre-writeback scheme; statistics based dead-block predictor; zero standby power; Accuracy; Energy harvesting; Hardware; Niobium; Nonvolatile memory; Random access memory; Surges;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design, Automation & Test in Europe Conference & Exhibition (DATE), 2015
  • Conference_Location
    Grenoble
  • Print_ISBN
    978-3-9815-3704-8
  • Type

    conf

  • Filename
    7092350