DocumentCode :
704009
Title :
A CNN-inspired mixed signal processor based on tunnel transistors
Author :
Sedighi, Behnam ; Palit, Indranil ; Hu, X. Sharon ; Nahas, Joseph ; Niemier, Michael
Author_Institution :
Dept. of Comput. Sci. & Eng., Univ. of Notre Dame, Notre Dame, IN, USA
fYear :
2015
fDate :
9-13 March 2015
Firstpage :
1150
Lastpage :
1155
Abstract :
Novel devices are under investigation to extend the performance scaling trends that have long been associated with Moore´s Law-based device scaling. Among the emerging devices being studied, tunnel FETs (or TFETs) are particularly attractive, especially when targeting low power systems. This paper studies the potential of analog/mixed-signal information processing using TFETs. The design of a highly-parallel processor - inspired by cellular neural networks - is presented. Signal processing is performed partially in the time-domain to better leverage the unique properties of TFETs, i.e., (i) steep slopes (high gm/IDS) in the subthreshold region, and (ii) high output resistance in the saturation region. Assuming an InAs TFET with feature sizes comparable to the 14 nm technology node, a power efficiency of 10,000 GOPS/W is projected. By comparison, state-of-the-art hardware assuming CMOS technology promises a power efficiency only close to 1,000 GOPS/W.
Keywords :
CMOS digital integrated circuits; cellular neural nets; field effect transistors; microprocessor chips; mixed analogue-digital integrated circuits; time-domain analysis; tunnel transistors; CMOS technology; CNN-inspired mixed signal processor; Moore law-based device scaling; analog-mixed-signal information processing; cellular neural networks; high-output resistance; highly-parallel processor; indium arsenide TFET; low-power systems; performance scaling trend; power efficiency; saturation region; signal processing; steep slopes; subthreshold region; time-domain; tunnel FET; tunnel transistors; CMOS integrated circuits; Clocks; Computer architecture; Microprocessors; Power dissipation; Radiation detectors; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design, Automation & Test in Europe Conference & Exhibition (DATE), 2015
Conference_Location :
Grenoble
Print_ISBN :
978-3-9815-3704-8
Type :
conf
Filename :
7092561
Link To Document :
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