DocumentCode :
704042
Title :
nCode: Limiting harmful writes to emerging mobile NVRAM through code swapping
Author :
Kan Zhong ; Duo Liu ; Linbo Long ; Xiao Zhu ; Weichen Liu ; Qingfeng Zhuge ; Sha, Edwin H.-M
Author_Institution :
Key Lab. of Dependable Service Comput. in Cyber Phys. Soc., Chongqing Univ., Chongqing, China
fYear :
2015
fDate :
9-13 March 2015
Firstpage :
1305
Lastpage :
1310
Abstract :
Mobile applications are becoming more and more powerful but also dependent on large main memories, which consume a large portion of system energy. Swapping to byte-addressable, non-volatile memory (NVRAM) is a promising solution to this problem. However, most NVRAMs have limited write endurance. To make it practical, the design of an NVRAM based swapping system must also consider endurance. In this paper, we target at prolonging the lifetime of NVRAM based swap area in mobile devices. Different from traditional wisdom, such as wear leveling and hot/cold data identification, we propose to build a system called nCode, which exploits the fact that code pages are easy to identify, read-only, and therefore a perfect candidate for swapping. Utilizing NVRAM´s byte-addressability, we support execute-in-place (XIP) of the code pages in the swap area, without copying them back to DRAM based main memory. Experimental results based on the Google Nexus 5 smartphone show that nCode can effectively prolong the lifetime of NVRAM under various workloads.
Keywords :
random-access storage; smart phones; Google Nexus 5 smartphone; XIP; byte-addressability; code pages; code swapping; cold data identification; execute-in-place; hot data identification; mobile NVRAM; mobile devices; nCode; nonvolatile memory; wear leveling; Ash; Delays; Google; Nonvolatile memory; Phase change materials; Random access memory; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design, Automation & Test in Europe Conference & Exhibition (DATE), 2015
Conference_Location :
Grenoble
Print_ISBN :
978-3-9815-3704-8
Type :
conf
Filename :
7092594
Link To Document :
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