Keynote Talk

A transition to more complex 3-dimensional (3D) device architectures can be seen in both Logic and Memory devices. Logic devices are progressing from planar to FinFET structures, and will likely move to a gate-all-around (GAA) structure in the future, while NAND Flash memory is seeing a transition from planar to 3D NAND with ≥32 device layers stacked in the vertical direction. In addition random access memories will likely see the introduction of cross-point memory arrays. These 3D device structures bring many process challenges that go beyond the traditional challenges of shrinking critical dimensions (CD) of device features. These include: depositing and etching new materials, controlling sensitive interface properties, depositing and etching ultra-high aspect ratio features in complex multi-film stacks, and introducing novel hard mask materials. Addressing these processing challenges is bringing innovative new technologies within the areas of film deposition and dry etch, to enable precision materials engineering solutions.