Asymmetric Composite Free Layers With Compensated Magnetization for Ultrahigh Density Integration of STT-MRAM

Author

Jie Shen ; Minjie Shi ; Tanaka, T. ; Matsuyama, Kimihide

Author_Institution

Grad. Sch. of Inf. Sci. & Electr. Eng., Kyushu Univ., Fukuoka, Japan

Volume

50

Issue

11

fYear

2014

fDate

Nov. 2014

Firstpage

1

Lastpage

5

Abstract

This paper analyzes the magnetization switching behavior of an asymmetric synthetic antiferromagnetic (AF) free layer for spin-transfer torque random access memory and numerically demonstrates thermally assisted magnetization switching. Optimization of the free-layer thickness and the magnetic properties enables successful magnetization switching while retaining the AF structure during the switching process. The thermal stability was improved by increasing the lateral aspect ratio of the free layers while also maintaining writability with a reduced current density under the thermal assistance.

Keywords

MRAM devices; antiferromagnetic materials; composite materials; current density; magnetisation; numerical analysis; optimisation; thermal stability; AF structure; STT-MRAM; asymmetric composite free layer; asymmetric synthetic antiferromagnetic free layer; compensated magnetization switching behavior; free-layer thickness optimization; numerical analysis; reduced current density writability; spin-transfer torque magnetoresistive random access memory; thermal stability; thermally assisted magnetization switching; ultrahigh density integration; Anisotropic magnetoresistance; Critical current density (superconductivity); Current density; Magnetization; Switches; Thermal stability; Torque; Micromagnetic simulation; spin-transfer torque (STT) random access memory (RAM); synthetic antiferromagnetic (AF) structure;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2014.2326894

Filename

6971535