Design of a transmit-receive (T/R) switch in TSMC 180nm RF CMOS process for 2.4GHz transceiver

Author

Kanphade, Rajendra D. ; Patil, Santosh B.

Author_Institution

Nutan Maharashtra Inst. Of Technol. & Eng., Pune, India

fYear

2015

fDate

19-20 Feb. 2015

Firstpage

881

Lastpage

886

Abstract

Design and analysis of a RF transmit/receive switch in 180nm CMOS RF process for 2.4GHz transceiver is presented. LC resonance along with stacked gate architecture is presented for designing the T/R switch. The switch exhibited excellent performance in terms of insertion loss, isolation linearity and gain. The switch added minimum noise by itself during the input and output switching and achieved stability throughout the operating rang at 2.4GHz. The designed switch exhibits -48.73dB and -79.04dB insertion loss during receiver and transmitter mode respectively. The isolation between non-used ports is -96.27 in both mode of operation. The designed switch handles more than 20 dBm power at 2.4 GHz frequency.

Keywords

CMOS integrated circuits; LC circuits; UHF integrated circuits; integrated circuit design; switches; transceivers; LC resonance; TSMC RF CMOS process; frequency 2.4 GHz; insertion loss; size 180 nm; transceiver; transmit-receive switch; Ports (Computers); Radio frequency; Receivers; Switches; Switching circuits; Transmitting antennas; A 2.4 GHz transceiver; CMOS RF process 180nm; Insertion loss; LC resonance; Port-to-port isolation; Stacked gates; Transmit/receive (T/R) switch;

fLanguage

English

Publisher

ieee

Conference_Titel

Signal Processing and Integrated Networks (SPIN), 2015 2nd International Conference on

Conference_Location

Noida

Print_ISBN

978-1-4799-5990-7

Type

conf

DOI

10.1109/SPIN.2015.7095284

Filename

7095284