DocumentCode
704672
Title
Analysis and comparison of leakage power reduction techniques in CMOS circuits
Author
Singhal, Smita ; Gaur, Nidhi ; Mehra, Anu ; Kumar, Pradeep
Author_Institution
Dept. of ECE, Amity Univ., Noida, India
fYear
2015
fDate
19-20 Feb. 2015
Firstpage
936
Lastpage
944
Abstract
This paper compares various leakage reduction techniques including Multi-threshold CMOS, Super-Cutoff CMOS, Zigzag, Stack Effect, Input Vector Control, LECTOR, Sleepy Stack, Sleepy Keeper, VCLEARIT, GALEOR, Dual Sleep, Sleepy-Pass Gate and Transistor Gating. The paper elaborately explores the working, comparison and analysis of all these techniques in different CMOS technologies. Leakage Power is analyzed during the standby mode of operation. It has been observed that for a particular circuit leakage depends on CMOS technology as well as leakage reduction technique. In this paper, wide range of results for leakage power reduction techniques of CMOS technologies from 180nm to 45nm is covered which will be helpful for further research in this area.
Keywords
CMOS integrated circuits; leakage currents; GALEOR; LECTOR; VCLEARIT; circuit leakage; dual sleep; input vector control; leakage power reduction techniques; multi threshold CMOS circuits; size 180 nm to 45 nm; sleepy keeper; sleepy stack effect; sleepy-pass gate; super-cutoff CMOS circuits; transistor gating; CMOS integrated circuits; CMOS technology; Leakage currents; Logic gates; Switching circuits; Threshold voltage; Transistors; GALEOR and Sleepy Pass Gate; Leakage reduction; MTCMOS; SSCMOS; Sleep approach;
fLanguage
English
Publisher
ieee
Conference_Titel
Signal Processing and Integrated Networks (SPIN), 2015 2nd International Conference on
Conference_Location
Noida
Print_ISBN
978-1-4799-5990-7
Type
conf
DOI
10.1109/SPIN.2015.7095351
Filename
7095351
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