DocumentCode
707543
Title
Low power-area efficient design of 1 bit full adder
Author
Yazhini, G. ; Rajendiran, M.
Author_Institution
Dept. of ECE, Chettinad Coll. of Eng. & Technol., Karur, India
fYear
2015
fDate
11-13 March 2015
Firstpage
1679
Lastpage
1683
Abstract
In nanometer design pattern, leakage power has a basic need of total power. Consumption of power have been increased as a priority in the aspect of design for every Integrated Circuits(IC). To an added note is a fundamental arithmetic operation is used frequently in many large scale as well as very large scale integration application oriented DSP and microprocessor designs. The Full adder circuit design is the very basic and indeed unit of an ALU, which decides the system´s overall behaviour. The power consumption of a processor is fully depends on the ALU, so the power consumed by the full adder circuit in the ALU should get partially reduced to match up the needs of a designer and so it will be called as “a efficiently less powered design”. This full adder design is of low powered and transistors of less count. which is verified using Micro wind simulations. The circuit design is of 6T and with pass transistor logic. The power of this circuit is tremendously less when compared to the previously designed adder circuit which is of 28T and 8T static and energy recovery full adder (SERF) design, whereas the delay is comparatively less.
Keywords
adders; logic design; low-power electronics; power consumption; transistor-transistor logic; ALU; Micro wind simulations; delay; efficiently less powered design; full adder circuit design; leakage power; low power-area efficient design; pass transistor logic; power consumption; word length 1 bit; Adders; Computational modeling; Integrated circuit modeling; Inverters; Logic gates; Microprocessors; Transistors; Gate diffusion input technique; Leakage power; PTL Technique; Tri-state inverters;
fLanguage
English
Publisher
ieee
Conference_Titel
Computing for Sustainable Global Development (INDIACom), 2015 2nd International Conference on
Conference_Location
New Delhi
Print_ISBN
978-9-3805-4415-1
Type
conf
Filename
7100533
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