Title :
Ohmic and rectifying contacts for ultraviolet photodiode based on AlGaN solid solutions
Author :
Andreev, M.Y. ; Lamkin, I.A. ; Tarasov, S.A. ; Mikhailov, I.I. ; Solomonov, A.V.
Author_Institution :
Dept. of Micro- & Nanoelectron., St. Petersburg Electrotech. Univ. LETI, St. Petersburg, Russia
Abstract :
A technology of Ti/Al contacts using thermal vacuum evaporation and further annealing in vacuum wasproposed. Contacts for Si-doped AlxGa1-xN epitaxial layers (x = 0.08 - 0.7, n = 1.7 · 1019 cm-3) were fabricated and investigated. The Si-doped epitaxial layers were grown by plasma-assisted MBE and HVPE (x = 0.1, n = 1016 - 1019) on c-sapphire substrates. The contact resistance of 8 · 10-5 Ω· cm2 was achieved for the Al0.5Ga0.5N sample. Auger electron spectroscopy was used to study redistribution of metal atoms after annealing.
Keywords :
Auger electron spectroscopy; III-V semiconductors; Schottky barriers; aluminium compounds; annealing; contact resistance; elemental semiconductors; evaporation; gallium compounds; molecular beam epitaxial growth; ohmic contacts; photodiodes; silicon; solid solutions; Al0.5Ga0.5N; AlxGa1-xN; Auger electron spectroscopy; HVPE; Si; Ti-Al; annealing; c-sapphire substrates; contact resistance; metal atom redistribution; ohmic contacts; plasma-assisted MBE; rectifying contacts; silicon-doped epitaxial layers; solid solutions; thermal vacuum evaporation; titanium-aluminium contacts; ultraviolet photodiode; Annealing; Epitaxial layers; Heating; Light emitting diodes; Nickel; Plasma temperature; AlGaN; Ohmic contacts; Schottky barriers;
Conference_Titel :
Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW), 2015 IEEE NW Russia
Conference_Location :
St. Petersburg
Print_ISBN :
978-1-4799-7305-7
DOI :
10.1109/EIConRusNW.2015.7102221
